| 摘要 |
PURPOSE:To reduce internal compression stress of a surface protective film for improving a life of a wiring, by forming an oxide film with a specific thickness by a low temperature CVD method as the first protective film brought into direct contact with a semiconductor element, and thereon providing a nitride film by a low temperature plasma CVD method as the second protective film with a specific thickness. CONSTITUTION:As the first protective film directly contacting with a semiconductor element, a silicon oxide film (an SiO2 film) is formed by a low temperature (300-450 deg.C) CVD method to the thickness not less than 3000Angstrom . Further, as the second protective film to be formed thereon, a silicon nitride film (an SiN film) is formed by a low temperature (300-450 deg.C) plasma CVD method to the thickness not less than 5000Angstrom and about 10000Angstrom . In the surface protective films formed in this way, stress is inversed between the first protective film consisting of the silicon oxide film and the second protective film consisting of the silicon nitride film. Thereby, the tensil internal stress of the first protective film eases up the compression stress of the second protective film.
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