| 摘要 |
PURPOSE: To provide a thermal oxide layer in which low tunnel operation voltage is possible by sputtering a metal on the first layer, forming a raised part through plasma-etching, and removing the part through excessive etching with a substrate, for growing the second layer. CONSTITUTION: With the second oxide layer 13 stuck on the first layer 11, a plasma-etching method 15 using an oxide etching agent is performed. With an aluminum 17 sputtered from an aluminum electrode stuck on the surface of an oxide layer 13, a glass type oxide residue 19 is formed. Then using the oxide-etching agent, an excessive etching is performed on a substrate surface for providing a recessed 21 on the substrate surface, with the process controlled by selectively of oxide etching. Then an oxidizing cycle, or the second processing part, is performed to remove the glass type oxide residue 19, with a substrate 10 with the recessed part 21 on its surface left. To grow a new oxide layer 23 on the substrate 10, a low temperature steam cycle is used. Thereby, a thermal oxide layer in which a high-quality tunnel oxide excellent in tunnel characteristics is generated is grown on the substrate.
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