BLUE-GREEN LASER DIODE

摘要

A II-VI compound semiconductor laser diode (IO) is formed from overlaying layers of material including an n-type single crystal semiconductor substrate (12), adjacent n-type and p-type guiding la- sers (14) and (16) of II-VI semiconductor forming a pn junction, a quantum well active layer (18) of II-VI semiconductor between the guiding layers (14) and (16), first electrode (32) opposite the substrate (12) from the n-type guiding layer (14), and a second electrode (30) opposite the p-type guiding layer (16) from the quantum well layer (18). Electrode layer (30) is characterized by a Fermi energy. A p-type ohmic contact layer (26) is doped, with shallow acceptors having a shallow acceptor energy, to a net acceptor concentration of at least I x 1017 cm-3, and includes sufficient deep energy states between the shallow acceptor energy and the electrode layer Fermi energy to enable cascade tunneling by charge carriers.