| 发明名称 |
Method for the manufacture of boron-containing films by CVD or epitaxial techniques using boron trifluoride |
| 摘要 |
This invention relates to a method for forming a boron-containing film of high quality on the surfaces of semiconductor wafers by CVD or epitaxial techniques using reaction gases including at least boron trifluoride.
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| 申请公布号 |
US5180692(A) |
申请公布日期 |
1993.01.19 |
| 申请号 |
US19910781669 |
申请日期 |
1991.10.24 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
IBUKA, SHIGEHITO;LEE, HIDEKI |
| 分类号 |
C23C16/40;H01L21/205 |
主分类号 |
C23C16/40 |
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