| 摘要 |
<p>PURPOSE:To form a Q-face ZnO epitaxial film dopes with Cu at a specified rate on a sapphire face roughly parallel to the R face and to form a Q-face ZnO epitaxial film having a good orientation property on the sapphire face roughly parallel to the R face. CONSTITUTION:A Zn metal target doped with a prescribed amount of Cu is used as a target 4 and at the same time, Ar+O2 gas is introduced into a container 7 and the target 4 is sputtered by Ar particles to eject Zn particles and Cu particles from the targets 4. The Zn particles made to fly out reacted with the Ar+O2 gas to turn into ZnO particles and a face (11 bar-20) ZnO epitaxial film doped with Cu at a rate of 4.5 pts.wt. or lighter to 95.5 pts.wt. of Zn can be obtained on a sapphire face roughly parallel to the face (01 bar-12) set using the ZnO particles and the Cu particles as samples. Or a ZnO ceramic target 4 doped with a prescribed amount of Cu is used, the target 4 is sputtered by Ar particles and ejected ZnO and Cu particles are deposited on a sample 6 to obtain the epitaxial film.</p> |
