发明名称 |
CLEAR CIRCUIT OF SEMICONDUCTOR MEMORY |
摘要 |
a logic gate group for receiving a power-on reset signal and a precharge signal, and turning on a MOS transistor of a first conductivity type connected to a first bit line during power-on reset; and a MOS transistor of a second conductivity type having a channel connected between a second bit line and a ground voltage, thereby rapidly clearing the RAM.
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申请公布号 |
KR940008134(B1) |
申请公布日期 |
1994.09.03 |
申请号 |
KR19910022377 |
申请日期 |
1991.12.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, YUK - JUNG |
分类号 |
G11C7/00;(IPC1-7):G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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