发明名称 CLEAR CIRCUIT OF SEMICONDUCTOR MEMORY
摘要 a logic gate group for receiving a power-on reset signal and a precharge signal, and turning on a MOS transistor of a first conductivity type connected to a first bit line during power-on reset; and a MOS transistor of a second conductivity type having a channel connected between a second bit line and a ground voltage, thereby rapidly clearing the RAM.
申请公布号 KR940008134(B1) 申请公布日期 1994.09.03
申请号 KR19910022377 申请日期 1991.12.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, YUK - JUNG
分类号 G11C7/00;(IPC1-7):G11C7/00 主分类号 G11C7/00
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