发明名称 |
Distributed negative gate power supply |
摘要 |
A distributed negative gate power supply for generating and selectively supplying a relatively high negative voltage to control gates of memory cells in selected half-sectors via wordlines in an array of flash EEPROM memory cells during flash erasure. The distributed negative gate power supply includes a main charge pumping circuit (20a, 20b), a plurality of distribution sector pumping means (18a-18p). Each of the plurality of distribution sector pumping circuits is responsive to a half-sector select signal for selectively connecting the primary negative voltage to the wordlines of the selected half-sectors.
|
申请公布号 |
US5406517(A) |
申请公布日期 |
1995.04.11 |
申请号 |
US19930109881 |
申请日期 |
1993.08.23 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
CHANG, CHUNG K.;CHEN, JOHNNY C.;VAN BUSKIRK, MICHAEL A.;CLEVELAND, LEE E. |
分类号 |
G11C17/00;G11C16/06;G11C16/30;(IPC1-7):G11C13/00 |
主分类号 |
G11C17/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|