| 摘要 |
<p>PROBLEM TO BE SOLVED: To directly apply a voltage to a selected gate connected with a selected gate electrode through a contact hole by forming a dummy pattern while retaining a distance with a second conductive layer. SOLUTION: A control gate 55 is supplied as a word line WL, and plural memory cells are connected to one work line in a lateral direction. The dummy pattern 65 is formed by retaining a prescribed distance from the work line 55. The dummy pattern 65 and a selected gate 75 are connected through a selected gate contact 95d. The selected gate 75 is formed in such a way that the dummy pattern 65 and the work line are mutually connected, even in a region (e) where they are detached. Thus, voltages can directly be applied to the selected gate 75 to the selected gate electrode through the contact hole. Consequently, junction leakage current between a drain and a substrate can be prevented.</p> |
