发明名称 |
Single split-gate MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range |
摘要 |
The size of an active pixel sensor cell is reduced by utilizing a single split-gate MOS transistor and a reset gate. The split-gate transistor includes an image collection region which is formed in the drain region and electrically connected to the floating gate of the transistor. Light energy striking the image collection region varies the potential of the floating gate which, in turn, varies the threshold voltage of the transistor. As a result, the current sourced by the transistor is proportional to the received light energy.
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申请公布号 |
US5608243(A) |
申请公布日期 |
1997.03.04 |
申请号 |
US19950545040 |
申请日期 |
1995.10.19 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
CHI, MIN-HWA;BERGEMONT, ALBERT |
分类号 |
H01L27/148;(IPC1-7):H01L27/148;H01L31/062 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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