发明名称 |
Method of producing semiconductor device using an adsorption layer |
摘要 |
An impurity adsorption layer is formed on a substrate surface and solid-phase thermal diffusion is carried out to form source and drain regions for a metal-insulator-semiconductor field-effect-transistor having lightly doped drain structure or double doped drain structure. The thus formed impurity-doped region is ultrashallow, thereby producing high speed semiconductor devices of small dimensions.
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申请公布号 |
US5851909(A) |
申请公布日期 |
1998.12.22 |
申请号 |
US19930006152 |
申请日期 |
1993.01.19 |
申请人 |
SEIKO INSTRUMENTS INC. |
发明人 |
KAMIYA, MASAAKI;AOKI, KENJI;SAITO, NAOTO |
分类号 |
H01L21/225;H01L21/336;H01L29/08;H01L29/78;(IPC1-7):H01L21/225 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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