发明名称 |
Methods for determining impurity distributions in microelectronic structures formed from aluminum-containing materials |
摘要 |
Impurity distributions in microelectronic structures formed from an aluminum-containing material are determined. A passivation layer, e.g., a titanium/titanium nitride layer or a borphosphosilicate glass (BPSG) layer, is formed on a substrate. A layer of the aluminum-containing material is formed on the passivation layer. The layer of the aluminum-containing material is then exposed to a phosphoric acid solution to remove aluminum from the layer of the aluminum-containing material and leave a precipitate on the passivation layer. The precipitate is then analyzed using scanning electron microscope (SEM) photomicrograms and/or Auger analysis to determine a distribution of impurities in the layer of the aluminum-containing material.
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申请公布号 |
US5851834(A) |
申请公布日期 |
1998.12.22 |
申请号 |
US19970934482 |
申请日期 |
1997.09.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MOON, SUNG-TEAK;CHOI, SUNG-PIL;LEE, DONG-JUN |
分类号 |
G01N33/00;G01N1/28;G01N23/225;H01L21/308;H01L21/66;(IPC1-7):G01N13/00 |
主分类号 |
G01N33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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