发明名称 POSITIVE TYPE RESIST COMPOSITION FOR ELECTRON BEAM OR X- RAY
摘要 PROBLEM TO BE SOLVED: To provide a positive type resist composition for electron beams or X-rays having high sensitivity and high resolution and excellent in stability of PED. SOLUTION: The positive type photoresist composition contains (a) a compound which generates an acid when irradiated with electron beams or X-rays, (b) a resin having the residue of a compound having a lower ionization potential than p-ethylphenol in a group released by the action of the acid and having a velocity of dissolution in an alkali developing solution increased by the action of the acid and (c) a solvent.
申请公布号 JP2002202608(A) 申请公布日期 2002.07.19
申请号 JP20000402591 申请日期 2000.12.28
申请人 FUJI PHOTO FILM CO LTD 发明人 SASAKI TOMOYA;MIZUTANI KAZUYOSHI;SHIRAKAWA KOJI
分类号 C08K5/42;C08L25/18;C08L101/02;G03F7/004;G03F7/039;H01L21/027 主分类号 C08K5/42
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