SEMICONDUCTOR MEMORY DEVICE HAVING A BURIED CAPACITOR AND FABRICATING METHOD THEREOF

摘要

The method comprises a stage which grows n type epitaxial layer, makes p type well on some part of the n type layer, isolates each of memory elements, grows gate oxide film on a front face, and makes polysilicon for a restricted gate in a gate region, a stage which makes p type source region and p type drain region, coats a protecting film in a front face and makes wiring.