METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method is provided to improve via contact resistance in forming dual-metal wires having via contact holes by etching the aluminum oxide film using SiCl4 gas. CONSTITUTION: The method comprises the steps of: forming an interlayer insulating film(7) and an aluminum film on a substrate(1), forming a insulating film pattern by exposing a predetermined region of the aluminum film, and etching an aluminum oxide film (6a) naturally formed on the surface of the exposed aluminum film by using SiCl4 gas. Thereby, it is possible to improve via contact resistance in forming dual-metal wires by etching the aluminum oxide film using SiCl4 gas.