发明名称 THIN-FILM MAGNETIC-SUBSTANCE MI ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a thin-film magnetic-substance MI element in which a change in an impedance can be made large by a low external magnetic field and which can constitute a linear magnetic field sensor without a need of a bias magnetic field in the thin-film magnetic-substance MI element which makes use of a magnetic-impedance effect. SOLUTION: A first magnetic substance 32 and a second magnetic substance 33 are overlapped on a glass substrate, and a film is formed. In addition, the first magnetic substance 32 and the second magnetic substance 33 are constituted in such a way that the easy axis of magnetization Jm1 of the first magnetic substance 32 is set in the direction of an angleαdeg. with reference to a reference line Oo as the passage direction of a high-frequency current Iac, that the easy axis of magnetization Jm2 of the second magnetic substance 33 is set in the direction of an angle -αdeg. and that the easy axis of magnetization Jm1 is crossed with the easy axis of magnetization Jm2.
申请公布号 JP2000284028(A) 申请公布日期 2000.10.13
申请号 JP19990087672 申请日期 1999.03.30
申请人 MORI KANEO;STANLEY ELECTRIC CO LTD 发明人 MORI KANEO;UENO KAZUHIKO
分类号 H01L43/00;G01R33/02;G11B5/33;(IPC1-7):G01R33/02 主分类号 H01L43/00
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