AMORPHOUS THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A method for manufacturing an amorphous thin-film-transistor(TFT) is provided to reduce manufacturing cost by forming a gate insulation layer and a passivation layer in a low-temperature process, and to improve stability of the TFT by adding hydrogen as reaction gas in the low-temperature process. CONSTITUTION: A gate electrode is formed on a substrate. The substrate having the gate electrode is mounted in a deposition apparatus while NH3, N2, SiH4 and hydrogen of 900-1000 sccm are induced to the deposition apparatus. Plasma is generated in the deposition apparatus having the induced mixture gas, and a silicon nitride layer is deposited on the substrate at a deposition temperature of 100-150 deg.C to form the gate insulation layer. Pure amorphous silicon and impurity amorphous silicon are consecutively deposited on the gate insulation layer to form an active layer. Source and drain electrodes separated from each other are deposited on the active layer in a separate deposition apparatus. The passivation layer in contact with the active layer is formed on the source and drain electrodes by the same material and process as the gate insulation layer and in the same equipment as the gate insulation layer is formed.