| 发明名称 |
A METHOD OF TREATING A SEMICONDUCTOR WAFER |
| 摘要 |
This invention relates to a method of treating a semicon- ductor wafer and in particular, but not exclusively, to planarisa- tion. The method consists of depositing a liquid short-chain po- lymer formed from a silicon containing gas or vapour. Subse- quently water and OH are removed and the layer is stabilised.
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| 申请公布号 |
CA2137928(C) |
申请公布日期 |
2002.01.29 |
| 申请号 |
CA19932137928 |
申请日期 |
1993.06.30 |
| 申请人 |
DOBSON, CHRISTOPHER DAVID |
发明人 |
DOBSON, CHRISTOPHER DAVID |
| 分类号 |
H01L21/316;B05D7/24;H01L21/00;H01L21/312;(IPC1-7):H01L21/316;C23C16/56 |
主分类号 |
H01L21/316 |
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