Photolithography process for producing gates and conductive lines

摘要

A lithography process for producing gates and connections thereof, which can reduce the pitch of gate end connections is provided. The process comprises the steps of forming a photoresist layer on the substrate; exposing the photoresist layer by using a phase shifter mask to form a gates pattern in the photoresist layer in the device region; exposing the photoresist layer by using a trimming mask to form a conductive lines pattern connected to the gates pattern in the photoresist layer in the isolation region; and developing the photoresist layer. The trimming mask can be a half-tone mask or a Cr-less alternating phase shifter