| 摘要 |
PURPOSE:To provide a bonding wire, for semiconductor element use, which is extremely useful to comply with the small size and the light weight of an LSI package by a method wherein the strength of an Au wire is enhanced by adding Pt and a low loop in a bonding operation is realized. CONSTITUTION:Pt at 1 to 30 wt. % is added to high-purity Au, at least one kind out of Sc, Y and rare-earth elements is added to it at 0.0001 to 0.05wt.%, one or more kinds out of Be, Ca, Ge, Ni, Fe, Co and Ag are added to it at 0.0001 to 0.05wt.%, and this mixture is melted and cast. Then, a grooved roll working operation is executed, an annealing treatment is executed in its halfway part, a wiredrawing operation is then executed, and a stress is removed sufficiently. Thereby, a bus having a wire diameter of 25mum is formed. |
