| 摘要 |
A layer structure comprising: a first conductive region (2); an insulating layer (3) formed on said first conductive region and having a contact hole (10,25A,28A,27A), said first conductive region being exposed through said contact hole; a second conductive layer (4) formed over said insulating layer and having an opening (6) having a width approximately equal to the scale limit attainable by the conventional photolithography technique and being larger than that of said contact hole (10), wherein said opening surrounds said contact hole, a conductive sidewall (8) formed over said insulating layer exposed through said opening and formed around an inner wall of said second conductive layer defining said opening, wherein the part of the conductive sidewall which is furthest form the second conductive layer defines the contour of said contact hole; and a third conductive layer (18) formed on said second conductive layer, said conductive sidewall and said first conductive region being exposed through said contact hole. <IMAGE> |
