| 摘要 |
<p>A gas mixture for removing photoresist and post etch residue from a low-k dielectric material and a using method thereof are provided to improve a photoresist strip speed and to enhance the uniformity of a photoresist strip process by using a predetermined volume rate between hydrogen and oxygen. A semiconductor substrate with a low-k dielectric material layer is introduced into a down-stream reaction chamber. At this time, photoresist and post etch residue exist on the low-k dielectric material layer. Predetermined plasma is generated, wherein the predetermined plasma is obtained from a gas mixture containing oxygen, hydrogen, and inactive carrier gas. The volume rate between the hydrogen and oxygen is in a predetermined range of 2: 1 or more. The photoresist and post etch residue are removed from the low-k dielectric material layer by introducing the predetermined plasma into the down-stream reaction chamber.</p> |
