发明名称 METHOD AND EQUIPMENT FOR CLEANING ELECTRONIC DEVICE, AND EVALUATING METHOD FOR ELECTRONIC DEVICE MANUFACTURED BY EMPLOYING SILICON WAFER OR GLASS SUBSTRATE THUS CLEANED AND PURE WATER EMPLOYED THEREIN
摘要 <p>PURPOSE:To eliminate micro defect from a fine pattern formed on a thin film or a cleaned surface which resist is exfoliated by cleaning the surface on a substrate from which photoresist is exfoliated or the surface for forming a thin film by the use of a specified ultrapure water. CONSTITUTION:pH of waste water is controlled in the range of 5.4-6.8 and polyaluminate chloride of 75-100ppm is added to the waste water in order to aggregate and precipitate main impurities. Content of ionic Al in the water to be processed is then set at 10ppm or below and ion exchange is performed to produce high purity water. The high purity water is further subjected to ion exchange thus producing ultrapure water wherein 10,000-100,000 ultrafine particles having particle size in the range of 0.01-0.03mum are contained in 1ml of ion exchanged secondary pure water. The superpure water is then passed sequentially through a security filter of 0.1mum mesh and superfine filters of 0.2mum and 0.1mum meshes to produce ultrapure water which is employed in the exfoliation of photoresist applied on a silicon wafer or glass substrate or in the cleaning of surface for forming thin film.</p>
申请公布号 JPH0697141(A) 申请公布日期 1994.04.08
申请号 JP19920242182 申请日期 1992.09.10
申请人 HITACHI LTD 发明人 EZAWA MASAYOSHI;KAWAGOE HIROMI;MORISHITA TOSHIKAZU;WATANABE SUMIKO
分类号 B08B3/10;C11D7/50;C23G1/00;G03F1/82;H01L21/027;H01L21/30;H01L21/304 主分类号 B08B3/10
代理机构 代理人
主权项
地址