发明名称 |
Vertical insulated gate transistor and manufacturing method |
摘要 |
A vertical insulated gate transistor is manufactured by providing a trench ( 26 ) extending through a source layer ( 8 ) and a channel layer ( 6 ) towards a drain layer ( 2 ). A spacer etch is used to form gate portions ( 20 ) along the trench side walls, a dielectric material ( 30 ) is filled into the trench between the sidewalls gate portions ( 20 ), and a gate electrical connection layer ( 30 ) is formed at the top of the trench electrically connecting the gate portions ( 20 ) across the trench.
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申请公布号 |
US7262460(B2) |
申请公布日期 |
2007.08.28 |
申请号 |
US20050538216 |
申请日期 |
2005.06.09 |
申请人 |
NXP B.V. |
发明人 |
SCHMITZ JURRIAAN;HUETING RAYMOND J. E.;HIJZEN ERWIN A.;MONTREE ANDREAS H.;IN'T ZANDT MICHAEL A. A.;KOOPS GERRIT E. J. |
分类号 |
H01L29/76;H01L21/336;H01L29/423;H01L29/78;H01L29/94;H01L31/00 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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