| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that may be patterned even at an area near the lower end of a sloping surface, and to provide a method of manufacturing the semiconductor device. SOLUTION: In the semiconductor device, an MOS transistor having a gate electrode 201 on the sloping surface 101 conducts first patterning of a lower layer gate electrode film at the area near the lower end of the sloping surface. Moreover, a space between the gate electrodes 201 is embedded to the principal front surface of the substrate until it becomes identical in the height to the principal front surface. Thereafter, a gate electrode film as an upper layer is formed and the gate electrode film is patterned. Accordingly, an aspect ratio when a contact hole is opened becomes small, and patterning of fine patterns can be conducted easily. COPYRIGHT: (C)2007,JPO&INPIT |
