| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element that can increase a quantity of light extraction from the side face of an n chip, and requires less manufacturing time and that is superior in yield, and to provide is manufacturing method. <P>SOLUTION: A GaN substrate 2, an n-type GaN semiconductor layer 3, an active layer 4, a p-type GaN semiconductor layer 5, a ZnO electrode film 6, and a ZnO substrate 7, are stacked on an n-side metal electrode 1 in sequence. In addition, a p-side metal electrode 8 is formed in a partial area on the ZnO substrate 7. The ZnO electrode film 6 is doped with impurities and changed into an n-type to reduce specific resistance, and it is formed on the p-type GaN semiconductor layer 5, while the ZnO substrate 7 is stuck onto the ZnO electrode film 6. Thus, a distance from the active layer 4 on the p side of the chip side face is made large, thereby improving the light extraction efficiency from the side face of the chip. <P>COPYRIGHT: (C)2007,JPO&INPIT |
