GROUP III NITRIDE LIGHT EMITTING DIODE

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride light emitting diode with a reflection layer made of Al or Ag wherein occurrence of a problem of a deteriorated reflectance of the reflection layer caused by undesirable diffusion of a metallic component from solder or the like to the reflection layer so as to improve the luminance of emitted light.

SOLUTION: The group III nitride light emitting diode includes: a metallic reflection film including an Al reflection layer or an Ag reflection layer; a bonding electrode separately provided from the metallic reflection film; and a protection film provided between the bonding electrode and the metallic reflection film and made of a non-metallic material. Since the protection film prevents undesirable diffusion of the metallic component from the bonding electrode or solder joined therewith to the Al reflection layer or the Ag reflection layer, the group III nitride light emitting diode has the excellent luminance of the emitted light.

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