发明名称 |
Method for evaluating a local flare, correction method for a mask pattern, manufacturing method for a semiconductor device and a computer program product |
摘要 |
A method for evaluating a local flare in an exposure tool, includes: measuring a projection light intensity distribution by transferring a monitor mask pattern onto a semiconductor substrate; calculating a first ratio between an illumination light intensity on the monitor mask pattern and a first projection light intensity calculated based on the monitor mask pattern; calculating a distribution function of a local flare, due to a mask pattern coverage of the monitor mask pattern, based on the first ratio and the projection light intensity distribution; dividing a design mask pattern into a plurality of unit areas; calculating a second ratio between the illumination light intensity on each of the unit areas and a second projection light intensity calculated based on the design mask pattern; and calculating a local flare intensity in each of the unit areas, based on the second ratio and the distribution function.
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申请公布号 |
US7327436(B2) |
申请公布日期 |
2008.02.05 |
申请号 |
US20050136404 |
申请日期 |
2005.05.25 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUKUHARA KAZUYA;TANAKA SATOSHI;CHIBA KENJI;HAYASAKI KEI;KAWANO KENJI |
分类号 |
G03B27/68;G03B27/72;G03F1/36;G03F1/84;H01L21/027 |
主分类号 |
G03B27/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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