| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method capable of coping with both of excellent etching selectivity and shaping property upon etching a hole, having fine and high aspect ratio, on an oxide film. SOLUTION: The plasma etching method includes a step of carrying a substrate with an oxide film for the object of etching, a hard mask layer and a patternized photo resist which are formed sequentially thereon into a processing vessel 10 to dispose the same on a lower electrode; a step of supplying processing gas containing C<SB>x</SB>F<SB>y</SB>(x is an integer not higher than 3, y is an integer not higher than 8), C<SB>4</SB>F<SB>8</SB>, rear gas and O<SB>2</SB>into a processing vessel 10; a step of producing the plasma of the processing gas by impressing high-frequency power on an upper electrode 34 from a first high-frequency impressing means 48; a step of applying a high-frequency power for bias on a lower electrode 16 from a second high-frequency electric power application means 90; and a step of applying a DC voltage on the upper electrode 34 from a DC voltage application means 50. COPYRIGHT: (C)2008,JPO&INPIT
|
