| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-voltage IC having a level shift circuit, wherein a transistor element constituting the level shift circuit is easy to connect and a wiring distance is small, and which has high area utilization efficiency for a semiconductor substrate that combines the level shift circuit with peripheral circuits. <P>SOLUTION: A high-voltage IC 101 has a floating reference gate driving circuit 20 and a level shift circuit 11. In the level-shift circuit 11, n (n≥2) transistor elements Tr, which are insulated and separated from each other, are arranged along and adjacent to circumference of the insulated and separated floating reference gate drive circuit 20, and are sequentially connected in series between a GND potential and a floating potential Vss so that the GND potential side is set to become a first stage and a floating potential Vss side is set to become an n-th stage. The floating reference gate drive circuit 20 and the level shift circuit 11 as a whole is laid out into a square shape. <P>COPYRIGHT: (C)2009,JPO&INPIT |
