发明名称 ミリ波帯用半導体パッケージおよびミリ波帯用半導体装置
摘要 Certain embodiments provide a millimeter wave bands semiconductor device including a first metal block, a second metal block, and a circuit board. The first metal block includes a first penetration hole and a second penetration hole, each of which has a flattening film on an inner surface thereof. The second metal block includes a first non-penetration hole and a second non-penetration hole, each of which has a flattening film on an inner surface thereof. The circuit board is disposed between the first metal block and the second metal block and has an input signal line and an output signal line on a front side surface thereof. The first metal block and the second metal block are disposed such that the first non-penetration hole and the first penetration hole constitute a first waveguide and the second non-penetration hole and the second penetration hole constitute a second waveguide.
申请公布号 JP5921586(B2) 申请公布日期 2016.05.24
申请号 JP20140022064 申请日期 2014.02.07
申请人 株式会社東芝 发明人 高木 一考
分类号 H01L23/02;H01L23/04;H01L23/06 主分类号 H01L23/02
代理机构 代理人
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