| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a SiC single crystal having a low threading dislocation density without forming a buffer layer.SOLUTION: The method for manufacturing a SiC single crystal makes the SiC single crystal grow from a SiC seed crystal substrate using a Si-C solution having a temperature gradient exhibiting a temperature drop toward the surface from the inside. In the method, the Si-C solution contains Si and Cr. The method comprises: making a boron density difference Bs-Bg between a boron density Bs in the seed crystal substrate and a boron density Bg in the target SiC single crystal become 1×10pieces/cm; making a chromium density difference Crg-Crs between a chromium density Crs in the seed crystal substrate and a chromium density Crg in the target SiC single crystal become 1×10pieces/cm; and making and a nitrogen density difference Ng-Ns between a nitrogen density Ns in the seed crystal substrate and a nitrogen density Ng in the target SiC single crystal become 3.5×10pieces/cmto 5.8×10pieces/cm.SELECTED DRAWING: Figure 4 |
