发明名称 |
METAL-INSULATOR-METAL STRUCTURE AND METHOD FOR FORMING THE SAME |
摘要 |
A semiconductor structure and a forming method thereof are provided. The method for manufacturing a semiconductor structure includes: forming a bottom electrode layer over a substrate; and forming a first passivation layer over the bottom electrode layer by a first atomic layer deposition process. The method for manufacturing a semiconductor structure further includes: forming a dielectric layer over the first passivation layer by a second atomic layer deposition process; and forming a second passivation layer over the dielectric layer by a third atomic layer deposition process. The method for manufacturing a semiconductor structure further includes forming a top electrode layer over the second passivation layer. |
申请公布号 |
KR20160067729(A) |
申请公布日期 |
2016.06.14 |
申请号 |
KR20150155842 |
申请日期 |
2015.11.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN HSING LIEN;TSAI CHIA SHIUNG;TSAI CHENG YUAN;CHU HUEY CHI;TRINH HAI DANG;CHIANG WEN CHUAN;TSENG WEI MIN |
分类号 |
H01L49/02;H01L21/203;H01L21/28;H01L27/24 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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