Methods of forming magnetic memory cells

摘要

Methods of forming memory cells, magnetic memory cell structures, and arrays of magnetic memory cell structures are disclosed. Embodiments of the methods include patterning a precursor structure to form a stepped structure including at least an upper discrete feature section and a lower feature section with a broader width, length, or both than the upper discrete feature section. The method uses patterning acts directed along a first axis, e.g., an x-axis, and then along a second axis, e.g., a y-axis, that is perpendicular to or about perpendicular to the first axis. The patterning acts may therefore allow for more unifoimity between a plurality of formed, neighboring cell core structures, even at dimensions below about thirty nanometers. Magnetic memory structures and memory cell arrays are also disclosed.

主权项

1. A method of forming a magnetic memory cell, the method comprising:
forming a precursor structure on a base, the precursor structure comprising a lower section comprising a magnetic material, an upper section comprising another magnetic material, and a non-magnetic material between the lower section and the upper section; patterning the upper section using an ion beam directed parallel to an x-axis to form an upper elongate feature section defining an upper feature width; forming a spacer on the upper elongate feature section to define a broader feature pattern; transferring the broader feature pattern to the non-magnetic material and the lower section to form a lower elongate feature section; patterning the upper elongate feature section using an ion beam directed parallel to a y-axis about perpendicular to the x-axis to form an upper discrete feature section; forming another spacer on the upper discrete feature section to define another broader feature pattern; and transferring the another broader feature pattern to the lower elongate feature section to form a lower discrete feature section.