| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which improves reliability of an electrode bonding part by forming a plating film having a uniform film thickness.SOLUTION: A semiconductor device comprises: a semiconductor substrate; a plurality of trench gate electrodes which extend from one principal surface of the semiconductor substrate to reach the inside of the semiconductor substrate, have a stripe shape in plan view and which are arranged in parallel and at distance from each other; a gate insulation film provided on surfaces of the trench gate electrodes; a first impurity layer provided in an upper layer part of the semiconductor substrate; second impurity layers which are selectively provided in a surface of the first impurity layer and contact the gate insulation film; interlayer insulation films which are provided so as to cover upper parts of the trench gate electrodes and upper parts of the second impurity layers, and which protrude from the semiconductor substrate and have a stripe shape in plan view; metal flattening embedded films which are provided so as to fill gaps among the interlayer insulation films protruding form the semiconductor substrate and which have flattened top faces; an extraction electrode which is provided on the flattening embedded films; and a bonded electrode provided on the extraction electrode.SELECTED DRAWING: Figure 1 |
