| 摘要 |
Methods for depositing a layer include a step of locating a plurality of substrates on a substrate support part in a processing chamber having a plurality of processing regions. Each of the processing regions is separated from an adjacent region by a gas curtain. To deposit a layer, exposure to first reactive gases, purge gases, second reactive gases, and a purge gas in at least one among the processing regions is alternately carried out. So, the deposition time can be reduced. |
