| 摘要 |
The present invention includes a photoelectric conversion unit, an amplifying element, a signal holding portion, and a charge transfer portion. The photoelectric conversion unit includes a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region. The signal holding portion includes a first-conductivity-type third semiconductor region and a control electrode disposed above the third semiconductor region via an insulator film. The second semiconductor region has a plurality of regions disposed at different depths. The plurality of regions has a first region that forms a PN junction with the first semiconductor region, a second region disposed at a position deeper than the first region, and a third region disposed between the first region and the second region. The impurity concentration peak P1 of the first region, the impurity concentration peak P2 of the second region, and the impurity concentration peak P3 of the third region satisfy P3<P1<P2. |
