| 摘要 |
The semiconductor device according to one embodiment includes a substrate, a semiconductor layer, a source electrode, a drain electrode, a first insulating part, and a second insulating part. The semiconductor layer includes an oxide and is separated from the substrate in a first direction. The source electrode is electrically connected to the semiconductor layer. The drain electrode is electrically connected to the semiconductor layer and is aligned with the source electrode in a second direction that intersects the first direction. The first insulating part is provided between the substrate and the semiconductor layer. The semiconductor layer is provided between the first insulating part and the second insulating part. The first insulating part includes a first silicon nitride layer and a first aluminum oxide layer that is laminated on the first silicon nitride layer. The second insulating part includes a second aluminum oxide layer and a second silicon nitride layer that is laminated on the second aluminum oxide layer. |
