| 发明名称 |
MOSFET WITH DUAL DIELECTRIC OF TITANIUM DIOXIDE ON SILICON DIOXIDE TO PREVENT SURFACE CURRENT MIGRATION PATH |
| 摘要 |
An insulated gate field effect transistor is described having a titanium dioxide surface layer over the usual insulating layer to interrupt surface charge migration between its source and drain.
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| 申请公布号 |
US3686544(A) |
申请公布日期 |
1972.08.22 |
| 申请号 |
USD3686544 |
申请日期 |
1969.02.10 |
| 申请人 |
U.S. PHILIPS CORP. |
发明人 |
PETER EDWARD STEIGMAN;FRANK ROBERT BADCOCK;DAVID ROBERT LAMB |
| 分类号 |
H01L21/316;H01L29/06;(IPC1-7):H01L11/14 |
主分类号 |
H01L21/316 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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