| 摘要 |
PURPOSE:To control physical properties of a film body and to enhance photoelectric conversion efficiency by a method wherein a window-side layer is formed of a fine crystal silicon film composed of only fine crystal silicon whose average particle diameter is 100Angstrom or lower. CONSTITUTION:When a window-side layer of a pin structure is formed, Si is deposited on a transparent conductive film 12 formed on a glass substrate 11 while a temperature of the glass substrate is set at 0 deg.C or lower and a hydrogen plasma is sputtered; then, a fine crystal film 13 of Si composed of an Si fine crystal whose average particle diameter is 100Angstrom or lower and whose volume ratio is nearly 100%. A band gap width of the obtained fine crystal Si film 13 becomes layer at about 2.0eV when the average crystal particle diameter is 100Angstrom or lower. In addition, the inside of the fine crystal body for the fine crystal Si thin film 13 is Si and the outside is formed of a silicon hydrogenated substance; accordingly, the strong thin film is formed. Thereby, this solar cell has a large photoelectric conversion efficiency characteristic. |
