| 摘要 |
PURPOSE:To increase the efficiency of mass-production and to operate the manufacturing system efficiently by a method wherein a plasma decomposition chamber is formed by surrounding a frame work with a glass substrate, a cathode electrode is provided inside the plasma decomposition chamber and two anode electrodes are provided in the vicinity of the outer circumference of the decomposition chamber, the glass substrate is heated up, and a transparent electrode film, which is made to grow by the decomposition of film-forming gas, and an amorphous silicon film are formed. CONSTITUTION:After each plasma decomposition chamber 17 is evacuated using a vacuum device connected to a gas exhaust pipe 21, film-forming gas is introduced into the plasma decomposition chamber 17 from the gas introducing pipe 20 of a gas feeding system. A part of said gas is exhausted from a gas exhaust pipe 21, and the plasma decomposition chamber 17 is maintained at a pressure of 1Torr or thereabout. Subsequently, high frequency power is applied to a cathode electrode 15 and anode electrodes 16 from an RF power source 14, and by the generation of plasma of film-forming gas in the plasma decomposition chamber 17 and using the wall surface of the chamber 17, a thin film is formed by the decomposition of the film-forming gas on the glass substrate 19 which is heated up to about 200 deg.C by a heater 24. |
