发明名称 GAS DISCHARGE DISPLAY AND MEMORY DEVICE
摘要 1475794 Gas discharge display panels OWENS-ILLINOIS Inc 17 May 1974 21959/74 Heading H1D The exact position of the discharges in a gas discharge display and/or memory panel as described in Specification 1,254,114 comprising opposed dielectric charge storage members backed by crossed electrode arrays, and in which one or more pilot discharge cells are provided, is determined by providing opposing areas of high electron yield material on each charge storage surface, each area being located at or near an electrode crossing point and being surrounded by a low electron yield material. The two materials are selected so that the ratio of their Townsend second coefficients is at least 1À5. Suitable high electron yield materials are oxides of Pb, Bi, Y, La, Er and Sm, and suitable low electron yield materials are oxides of Al, Si, Zr, Ti and Hf. The high electron yield material may be applied as islands of circular or any other geometrical shape. If applied directly at the electrode crossing points part of one or both electrodes may be open or split or made transparent at these points to prevent the electrodes from blocking the light of the discharge In the embodiment shown spots 1 of high electron yield material are positioned between an electrode R and a transparent spur or cantilever portion 3 extending from an electrode C and are surrounded by low electron yield material 2.
申请公布号 GB1475794(A) 申请公布日期 1977.06.10
申请号 GB19740021959 申请日期 1974.05.17
申请人 OWENS ILLINOIS INC 发明人
分类号 H01J11/12;H01J11/38;H01J11/40;H01J17/49;(IPC1-7):H01J61/35;H01J61/92 主分类号 H01J11/12
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