| 摘要 |
PURPOSE:To minimize wave-form defectiveness and leakage and thus to stabilize characteristics by activating an n-type GaAs thin film which is fixed on a heat conductive plate to have Schottky barrier gate terminal, source terminal and drain terminal formed thereon. CONSTITUTION:An n-type GaAs thin film 7 is formed through epitaxial growth, and the thin film 7 is fixed on a diamond plate 6 working as a heat conductive plate with an insulating inorganic adhesive. Next, a shot key barrier gate terminal 11, source terminal 9 and drain terminal 10 are formed through etching to use the n-type GaAs thin film as an activator. To improve reliability, Al is used for the terminal 11 and gold/germanium-nickel laminated metals for the terminals 9 and 10. Stable characteristics free from wave-form defectiveness and leakage are thereby obtainable. |
