| 摘要 |
PURPOSE:To form a complementary MOS transistor integrated circuit by two processes of masking by using a mask covering one channel of the transistor and patterning the other transistor in a complementary transistor. CONSTITUTION:A P well 13 is formed on an N type semiconductor substrate 11 to form a gate oxide film 14, a field oxide film 12, a conductive layer 15 such as poly crystal silicon or the like. Then, the whole P type region 13 surface is covered by using a photoresist 30 to form a gate section 17 and a wiring section 18 on the N type region. Next, boron is implanted in the substrate by ion implantation technique to form the source and drain regions 20 of a P channel MOS transistor. Next, the photoresist 30 is removed to form a photoresist 31 covering the whole P-MOS transistor surface and having a gate and a wiring pattern on an N-MOS transistor formation section and an N channel MOS transistor is formed. |
