发明名称 |
Low resistance Schottky diode on polysilicon/metal-silicide. |
摘要 |
<p>A Schottky diode is fabricated according to the following steps: forming a layer of metal-silicide on an underlying dielectric layer, forming a polysilicon layer on the upper surface of the metal-silicide layer, forming a second dielectric layer on the upper surface of the polysilicon layer and patterning the second dielectric layer to create a contact window through the second dielectric layer to an exposed surface region of the polysilicon layer, and forming a metal contact to the exposed surface region.</p> |
申请公布号 |
EP0057135(A2) |
申请公布日期 |
1982.08.04 |
申请号 |
EP19820400107 |
申请日期 |
1982.01.21 |
申请人 |
FAIRCHILD CAMERA & INSTRUMENT CORPORATION |
发明人 |
VORA, MADHUKAR B.;HINGARH, HEMRAJ K. |
分类号 |
H01L21/329;H01L21/70;H01L21/84;H01L29/04;H01L29/47;H01L29/861;H01L29/872;(IPC1-7):01L27/12;01L29/48 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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