发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND FABRICATION THEREOF
摘要 <p>PURPOSE:To provide a high output, low current operation super luminescent diode being employed as a light source for optical fiber gyro or the like, and fabrication thereof. CONSTITUTION:A first conductivity type first optical guide layer 5 of Ga1-Y1AlYl and a second optical guide layer 6 of Ga1-Y2AlY2As are formed sequentially on at least one side on the main surface of an active layer, i.e., a Ga1-XAlXAs layer. A Ga1-ZAlZAs layer of opposite conductivity type having a stripe groove is formed on the second optical guide layer 6 and a Ga1-Y3AlY3As layer of same conductivity type as the optical guide layer is formed in the stripe window 7a. The mixed crystal ratios X, Y1, Y2, Y3, Z of AlAs satisfy following relationships; Z>Y3>Y2>X>=0, and Y1>Y2. The stripe window 7a is inclining at an angle of 3-15 deg. against the vertical plane at the front edge of the stripe window 7a.</p>
申请公布号 JPH06188509(A) 申请公布日期 1994.07.08
申请号 JP19920338429 申请日期 1992.12.18
申请人 MATSUSHITA ELECTRON CORP 发明人 SUGIURA HIDEYUKI;NAITO HIROKI;KUME MASAHIRO;ITO KUNIO
分类号 H01S5/00;H01L33/06;H01L33/10;H01L33/14;H01L33/30;H01S5/042 主分类号 H01S5/00
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