METHOD OF PRODUCING SEMICONDUCTOR DEVICE

摘要

A method of producing semiconductor components comprises applying a silicon disc (1) with a plurality of successive layers (2, 3, 4) of different types of conductivity to a carrier disc (6) of highly doped silicon through an intermediate layer (5) of aluminium/silicon. The structure is then subdivided (e.g. ultrasonically) to produce individual devices, the silicon carrier disc (6) forming part of the finished device.