| 摘要 |
PURPOSE:To enable selective crystal growth by opposing and contacting tightly a solid material on which a mask is patterned, a gaseous phase growth material, with a substrate to which selective crystal growth will be applied, and providing a temperature gradient between these two bodies in such a way that the substrate is on the low temperature side. CONSTITUTION:A mirror-finished surface of a GaAs single crystal raw material 11 is covered with a SiN laminar mask 12, on which striped windows 13 are formed. Subsequently a mirror-finished GaAs single crystal substrate 14, coated with a Ga0.65Al0.35As cladding layer 15, is opposed and tightly contacted with the material 11 on which the mask 12 is formed. Both bodies are held in a hydrogen atmosphere of 900 deg.C inside graphite holders 20, 21, where a temperature gradient is provided in the manner that the temperature of the substrate 14 is lower than that of the material 11. With this heat-treatment, part of the material 11 is consumed to selectively grow a GaAs light wave guide layer 16 on the substrate 14. |
