| 摘要 |
PURPOSE:To regulate the dimension precisely, by implanting impurities into mask material before dry etching, and by producing the impurities near the mask at a high concentration during etching. CONSTITUTION:After W 2 is deposited on an Si substrate 3 and resist 1 is applied thereon, a pattern is formed. Next, S ions 5 are implanted into the resist by 10<13>-10<17> per cm<3>. Thereafter, if the W 2 is dry-etched with SF6, S 6 produced from the mask 1 sulfates the side walls of the W 2 to form a protective film 4 for preventing side face etching, with the result that an approximately vertical etching shape can be attained. According to the mask material, at least one of C, O, N, H, F and Cl may be implanted. |
