| 摘要 |
PURPOSE:To reduce a production density of OSF by a method wherein a semiconductor substrate is oxidized in an oxidizing atmosphere containing oxygen to form a thermal oxide film with a thickness of not less than 40nm and then continually oxidized in another oxidizing atmosphere containing vapor to form a thermal oxide film with a thickness of not less than 100nm. CONSTITUTION:A thermal oxide film with a thickness of not less than 40nm is formed by the oxidization in an oxidizing atmosphere containing oxygen in the initial stage of an oxidizing process. If the thickness of the formed thermal oxide film is less than 40nm, a production density of OSF is not so much different from that obtained by the oxidization in an oxidizing atmosphere containing vapor only. As the atmosphere of the initial stage of the oxidizing process is different from that of the latter stage, the production density of OSF is reduced and the thermal oxide film with the thickness of not less than 100nm can be formed without reducing a through-put so much. |
