| 摘要 |
<p>PURPOSE:To reduce the deformation of a mask in the vertical deirection by a method wherein a protruded part and a recessed part are formed in the thickness direction at the exposure region of a second absorbing layer, for X-ray lithography or the like, whose mask frame is thick so that the stress of the second absorbing layer can be relaxed at the protruded and recessed parts. CONSTITUTION:A first absorbing, patterned and thin layer 2 is formed at a rectangular exposure region on a membrane 1 of a mask, and a second absorbing layer 3 with a thick frame part is formed at its outer circumference. A protruded part 3A and a recessed part 3B are formed at the frame part on the exposure region of the absorbing layer 3. If the recessed part 3B is arranged face to face with the protruded part 3A and the protruded part 3A is arranged face to face with the recessed part 3B at the inner circumference of the second absorbing layer 3 of the mask where the protruded and recessed parts are formed, the stress at the exposure region can be relaxed even when the thickness of the frame part is thin. As a result, the deformation in the vertical direction during the patterning process for the manufacture of the mask can be reduced, and the change in the position and size of a pattern can be suppressed with a view to preventing the out-of-focus phenomenon at the exposure.</p> |
